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General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well. DC converters, and high efficiency switching for power. FQP Series. V DSS. V GSS. Drain-Source Voltage. Drain Current. Drain Current - Pulsed. Note 1. Gate-Source Voltage. Single Pulsed Avalanche Energy. Note 2. Avalanche Current. Repetitive Avalanche Energy.

Note 3. Operating and Storage Temperature Range. Maximum lead temperature for soldering purposes,. Thermal Characteristics. Thermal Resistance, Junction-to-Case. Thermal Resistance, Case-to-Sink. Thermal Resistance, Junction-to-Ambient. Typ Max. A2, March Electrical Characteristics. Test Conditions. Min Typ Max Units. Off Characteristics. BV DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. I DSS. Zero Gate Voltage Drain Current. I GSSF. I GSSR. On Characteristics.

V GS th. R DS on. Gate Threshold Voltage. Static Drain-Source. Dynamic Characteristics. C iss Input Capacitance.

C oss. Output Capacitance. C rss Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-Off Delay Time. Q g Total Gate Charge. Q gs Gate-Source Charge.

Q gd Gate-Drain Charge. Note 4, 5. Q rr Reverse Recovery Charge. Note 4. Repetitive Rating : Pulse width limited by maximum junction temperature. Essentially independent of operating temperature.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. S FQP50N06 60 50 Repetitive Rating : Pulse width limited by maximum junction temperature 2.


FQP50N06 Datasheet PDF

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FQP50N06 MOSFET. Datasheet pdf. Equivalent


ANSI B18.22.1 PDF

Datasheet FQP50N06 - Fairchild MOSFET, N, TO-220


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