IBM EDRAM PDF

While there were no substantial updates, session Rather than using 6 or 8 transistors to store each bit, eDRAM cells rely on a capacitor and a single access transistor. Additionally, there is a slight decrease in active power and a substantial drop in standby power. However, the capacitor must refresh periodically to retain the data and the access time is substantially slower than SRAM. The high access times are one reason why eDRAM is suitable for large arrays e.

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Skip to Main Content. A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity. Use of this web site signifies your agreement to the terms and conditions. Personal Sign In. For IEEE to continue sending you helpful information on our products and services, please consent to our updated Privacy Policy. Email Address. Sign In. Since its introduction in the s, the DRAM technology has been driven by cost while the logic technology has been driven by speed, leading to an ever-widening gap between slower memory and faster logic devices.

That has led to the need for increasingly complex levels of memory hierarchies, resulting in considerable degradation of system performance despite many design and architecture compromises. DRAM can provide six to eight times as much memory as SRAM static random access memory in the same area, but has been too slow to be used at any cache level. Our studies, highlighted in this paper, indicated that the use of logic-based DRAM could resolve that difficulty—and was necessary for integrating systems on a chip.

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The Power Of eDRAM

Skip to Main Content. A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity. Use of this web site signifies your agreement to the terms and conditions. Personal Sign In. For IEEE to continue sending you helpful information on our products and services, please consent to our updated Privacy Policy.

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IBM Unveils World's Fastest On-Chip Dynamic Memory Technology

In performance and size, eDRAM is positioned between level 3 cache and conventional DRAM on the memory bus, and effectively functions as a level 4 cache, though architectural descriptions may not explicitly refer to it in those terms. It is also possible to use architectural techniques to mitigate the refresh overhead in eDRAM caches. Certain software utilities can model eDRAM caches. From Wikipedia, the free encyclopedia. This article needs additional citations for verification.

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